By Douglas A. Pucknell
Read or Download Basic VLSI Design PDF
Best design books
Каталог домашних принадлежностей: лампы, светильники, столики и т. д. contents 22 ACCESSORIES:96 FURNITURE112 backyard PATIO116 LIGHTING:128 WALL DECOR:24 SCULPTURAL gadgets: ANIMALS // 32 VARIOUS46 VASES AND BOWLS62 CANDLEHOLDERS76 CONTAINERS80 TRAYS90 ornamental items: FILLERS //92 BOOKENDS // ninety four HEARTH118 LAMPS126 CHANDELIERS AND PENDANTS130 MIRRORS138 add-ons
Structural irregularities are probably the most widespread factors of critical damages in structures, as evidenced through the various earthquakes in recent times. This factor is of specific significance, on account that actual constructions are just about all abnormal. moreover, structural irregularities rely on a number of components frequently very tough to foretell.
This ebook offers a singular method of the research and layout of all-digital phase-locked loops (ADPLLs), expertise customary in instant verbal exchange units. The authors supply an outline of ADPLL architectures, time-to-digital converters (TDCs) and noise shaping. sensible examples illustrate easy methods to examine and simulate part noise within the presence of sigma-delta modulation and time-to-digital conversion.
- Earthen Floors: A Modern Approach to an Ancient Practice
- Design of a Winston Chassis for Torsional Stiffness
- Virtual Screening: An Alternative or Complement to High Throughput Screening?: Proceedings of the Workshop ‘New Approaches in Drug Design and Discovery’, special topic ‘Virtual Screening’, Schloβ Rauischholzhausen, Germany, March 15–18, 1999
- Detail in Contemporary Office Design
- Implications of Intelligent, Integrated Microsystems for Product Design and Development
Additional resources for Basic VLSI Design
Tt. svoo (>' ~ FIGURE 2. 7 nMOS Inverter transfer characteristic. d. where Z is determined by the length to width ratio of the transistor in question). 2. 7 [. 8 in which an inverter is driven from the output of another similar inverter. 8 nMOS inverter driven directly by another inverter. d. d. U-:,v -2 V, f smce . 3:_ ( L pd w vmv - v. :.... u. are the widths and lengths of the pull-down and pull-up transistors respectively. d. u. d. :.... u. d. d. = 4/1 for an inverter directly driven by an inverter.
Latch-up problems can be considerably reduced by using a low-resistivity epitaxial p-type substrate as the starting material, which can subsequently act as a very low resistance ground-plane to collect substrate currents. However, a factor of the n-well process is that the performance of the already poorly performing p-transistor is even further degraded. Modern process lines have come to grips with these problems, and good device performance may be achieved for both p-well and n-well fabrication.
A small current now flows through the inverter from V00 to V55 . If we wish to analyze the behavior in this region, we equate the p-device resistive region current with the n-device saturation current and thus obtain the voltage and current relationships. Region 4 is similar to region 2 but with the roles of the p- and n-transistors reversed. However, the current magnitudes in regions 2 and 4 are small and most of the energy consumed in switching from one state to the other is due to the larger current which flows in region 3.